ZXTP25020CFHTA
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- Mfr.Part #
- ZXTP25020CFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 4A SOT23-3
- Stock
- 25,292
- In Stock ：
- 25,292
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 200mA, 4A
- Transition Frequency :
- 285MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Breakdown Voltage :
- 20V
- Radiation Hardening :
- No
- Frequency :
- 285MHz
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 20V
- Pin Count :
- 3
- Power Dissipation :
- 1.81W
- Continuous Collector Current :
- -4A
- Mounting Type :
- Surface Mount
- Height :
- 1mm
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 25V
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- -7V
- Length :
- 3.05mm
- Weight :
- 7.994566mg
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 20V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 285MHz
- Published :
- 2006
- Max Collector Current :
- 4A
- Lead Free :
- Lead Free
- Power - Max :
- 1.25W
- hFE Min :
- 85
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Max Power Dissipation :
- 1.81W
- Base Part Number :
- ZXTP25020C
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -150mV
- Width :
- 1.4mm
- REACH SVHC :
- No SVHC
- Datasheets
- ZXTP25020CFHTA
ZXTP25020CFHTA Documents
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25020CFHTA Overview
DC current gain in this device equals 200 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -150mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 210mV @ 200mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at -4A to achieve high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.As a result, the part has a transition frequency of 285MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 4A volts.
ZXTP25020CFHTA Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 210mV @ 200mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 285MHz
ZXTP25020CFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25020CFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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