ZXTP2029FTA
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- Mfr.Part #
- ZXTP2029FTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A SOT23-3
- Stock
- 851
- In Stock ：
- 851
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- SOT-23-3
- Factory Lead Time :
- 15 Weeks
- Frequency :
- 150MHz
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.56W
- Radiation Hardening :
- No
- Base Part Number :
- ZXTP2029
- Max Breakdown Voltage :
- 100V
- Power - Max :
- 1.2W
- Published :
- 2005
- Voltage - Rated DC :
- -100V
- Width :
- 1.4mm
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Collector Base Voltage (VCBO) :
- 130V
- Max Frequency :
- 150MHz
- Mounting Type :
- Surface Mount
- Polarity :
- PNP
- Mount :
- Surface Mount
- Length :
- 3.05mm
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -3A
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 400mA, 4A
- Height :
- 1mm
- Weight :
- 7.994566mg
- Gain Bandwidth Product :
- 150MHz
- Max Operating Temperature :
- 150°C
- Max Power Dissipation :
- 1.56W
- REACH SVHC :
- No SVHC
- Current - Collector (Ic) (Max) :
- 3A
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Saturation Voltage :
- -135mV
- Emitter Base Voltage (VEBO) :
- 7V
- Max Collector Current :
- 3A
- Packaging :
- Tape and Reel (TR)
- Datasheets
- ZXTP2029FTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP2029FTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -135mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 400mA, 4A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 100V volts.This product comes in a SOT-23-3 device package from the supplier.Device displays Collector Emitter Breakdown (100V maximal voltage).Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
ZXTP2029FTA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -135mV
the vce saturation(Max) is 250mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -3A
the supplier device package of SOT-23-3
ZXTP2029FTA Applications
There are a lot of Diodes Incorporated
ZXTP2029FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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