ZXTP2014GTA
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- Mfr.Part #
- ZXTP2014GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 140V 4A SOT223-3
- Stock
- 13,312
- In Stock ：
- 13,312
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Weight :
- 7.994566mg
- Max Breakdown Voltage :
- 140V
- Voltage - Rated DC :
- -140V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 3W
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- ZXTP2014
- Current Rating :
- -4A
- Transition Frequency :
- 120MHz
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Pin Count :
- 4
- Collector Emitter Voltage (VCEO) :
- 140V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Max Collector Current :
- 4A
- Width :
- 3.7mm
- Gain Bandwidth Product :
- 120MHz
- Collector Emitter Saturation Voltage :
- -275mV
- ECCN Code :
- EAR99
- Frequency :
- 120MHz
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 300mA, 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.65mm
- Factory Lead Time :
- 15 Weeks
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 140V
- Length :
- 6.7mm
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- -4A
- Power Dissipation :
- 3W
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 180V
- Element Configuration :
- Single
- Datasheets
- ZXTP2014GTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2014GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -275mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 360mV @ 300mA, 3A.Continuous collector voltages of -4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 120MHz.Single BJT transistor can take a breakdown input voltage of 140V volts.During maximum operation, collector current can be as low as 4A volts.
ZXTP2014GTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -4A
a transition frequency of 120MHz
ZXTP2014GTA Applications
There are a lot of Diodes Incorporated
ZXTP2014GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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