ZXTP2014GTA
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- Mfr.Part #
- ZXTP2014GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 140V 4A SOT223-3
- Stock
- 13,312
- In Stock ：
- 13,312
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 3W
- Frequency :
- 120MHz
- Pin Count :
- 4
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- -4A
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -4A
- Max Collector Current :
- 4A
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 140V
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 140V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 3W
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 140V
- Base Part Number :
- ZXTP2014
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 300mA, 3A
- Pbfree Code :
- No
- Length :
- 6.7mm
- REACH SVHC :
- No SVHC
- Number of Pins :
- 4
- Factory Lead Time :
- 15 Weeks
- Width :
- 3.7mm
- Collector Base Voltage (VCBO) :
- 180V
- Height :
- 1.65mm
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Transition Frequency :
- 120MHz
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 120MHz
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -140V
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- -275mV
- Terminal Form :
- Gull wing
- Datasheets
- ZXTP2014GTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2014GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -275mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 360mV @ 300mA, 3A.Continuous collector voltages of -4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 120MHz.Single BJT transistor can take a breakdown input voltage of 140V volts.During maximum operation, collector current can be as low as 4A volts.
ZXTP2014GTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -4A
a transition frequency of 120MHz
ZXTP2014GTA Applications
There are a lot of Diodes Incorporated
ZXTP2014GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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