ZXTP2013ZTA
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- Mfr.Part #
- ZXTP2013ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 3.5A SOT89-3
- Stock
- 61,986
- In Stock ：
- 61,986
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 2.1W
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 15 Weeks
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 125MHz
- Height :
- 1.6mm
- Current Rating :
- -3.5A
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Weight :
- 51.993025mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Pbfree Code :
- No
- JESD-609 Code :
- e3
- Package / Case :
- TO-243AA
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 140V
- Width :
- 2.6mm
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 400mA, 4A
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 125MHz
- Max Collector Current :
- 3.5A
- Collector Emitter Saturation Voltage :
- -240mV
- Mount :
- Surface Mount
- Voltage - Rated DC :
- -100V
- Base Part Number :
- ZXTP2013
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2006
- Transition Frequency :
- 125MHz
- Terminal Position :
- Dual
- Power Dissipation :
- 2.1W
- Collector Emitter Voltage (VCEO) :
- 100V
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 100V
- Max Breakdown Voltage :
- 100V
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 7V
- Pin Count :
- 4
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transistor Element Material :
- SILICON
- Length :
- 4.6mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- -3.5A
- Datasheets
- ZXTP2013ZTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP2013ZTA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -240mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 400mA, 4A.Maintaining the continuous collector voltage at -3.5A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3.5A).125MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 3.5A volts.
ZXTP2013ZTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -3.5A
a transition frequency of 125MHz
ZXTP2013ZTA Applications
There are a lot of Diodes Incorporated
ZXTP2013ZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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