ZXTP2012ZTA
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- Mfr.Part #
- ZXTP2012ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 4.3A SOT89-3
- Stock
- 7,125
- In Stock ：
- 7,125
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current :
- 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Collector Base Voltage (VCBO) :
- -100V
- Package / Case :
- TO-243AA
- Vce Saturation (Max) @ Ib, Ic :
- 215mV @ 500mA, 5A
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector (Ic) (Max) :
- 4.3A
- Published :
- 2005
- Length :
- 4.6mm
- Max Power Dissipation :
- 2.1W
- REACH SVHC :
- No SVHC
- Height :
- 1.6mm
- Power Dissipation :
- 1.5W
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Max Junction Temperature (Tj) :
- 150°C
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- -4.3A
- Base Part Number :
- ZXTP2012
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 120MHz
- Terminal Form :
- Flat
- Collector Emitter Breakdown Voltage :
- -80V
- Transition Frequency :
- 120MHz
- hFE Min :
- 100
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -60V
- Width :
- 2.6mm
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- -60V
- Emitter Base Voltage (VEBO) :
- -7V
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Pin Count :
- 3
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-F3
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 15 Weeks
- Current Rating :
- -4.3A
- Voltage :
- 60V
- Gain Bandwidth Product :
- 120MHz
- Collector Emitter Saturation Voltage :
- -160mV
- Continuous Collector Current :
- -4.3A
- Weight :
- 51.993025mg
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Datasheets
- ZXTP2012ZTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP2012ZTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 1V.The collector emitter saturation voltage is -160mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -4.3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -4.3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 120MHz.There is a breakdown input voltage of 60V volts that it can take.In extreme cases, the collector current can be as low as -4.3A volts.
ZXTP2012ZTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -160mV
the vce saturation(Max) is 215mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -4.3A
a transition frequency of 120MHz
ZXTP2012ZTA Applications
There are a lot of Diodes Incorporated ZXTP2012ZTA applications of single BJT transistors.
-
Driver
-
Muting
-
Interface
-
Inverter
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