ZXTP2012ZTA
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- Mfr.Part #
- ZXTP2012ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 4.3A SOT89-3
- Stock
- 7,125
- In Stock ：
- 7,125
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Collector Emitter Saturation Voltage :
- -160mV
- Collector Emitter Breakdown Voltage :
- -80V
- Height :
- 1.6mm
- Base Part Number :
- ZXTP2012
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Terminal Form :
- Flat
- REACH SVHC :
- No SVHC
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 2.6mm
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -60V
- Collector Emitter Voltage (VCEO) :
- -60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2.1W
- ECCN Code :
- EAR99
- Continuous Collector Current :
- -4.3A
- Vce Saturation (Max) @ Ib, Ic :
- 215mV @ 500mA, 5A
- Current :
- 4A
- Package / Case :
- TO-243AA
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- -100V
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 1.5W
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Frequency :
- 120MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Factory Lead Time :
- 15 Weeks
- Transition Frequency :
- 120MHz
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Published :
- 2005
- Current Rating :
- -4.3A
- Number of Terminations :
- 3
- Max Junction Temperature (Tj) :
- 150°C
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Length :
- 4.6mm
- Max Collector Current :
- -4.3A
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-F3
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 120MHz
- hFE Min :
- 100
- Emitter Base Voltage (VEBO) :
- -7V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 60V
- Current - Collector (Ic) (Max) :
- 4.3A
- Voltage :
- 60V
- Weight :
- 51.993025mg
- Datasheets
- ZXTP2012ZTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP2012ZTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 1V.The collector emitter saturation voltage is -160mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -4.3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -4.3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 120MHz.There is a breakdown input voltage of 60V volts that it can take.In extreme cases, the collector current can be as low as -4.3A volts.
ZXTP2012ZTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -160mV
the vce saturation(Max) is 215mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -4.3A
a transition frequency of 120MHz
ZXTP2012ZTA Applications
There are a lot of Diodes Incorporated ZXTP2012ZTA applications of single BJT transistors.
-
Driver
-
Muting
-
Interface
-
Inverter
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