ZXTP2012GTA

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Mfr.Part #
ZXTP2012GTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 5.5A SOT223-3
Stock
28,754
In Stock :
28,754

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
3W
Factory Lead Time :
15 Weeks
Voltage - Rated DC :
-60V
Collector Emitter Saturation Voltage :
-195mV
Mounting Type :
Surface Mount
Gain Bandwidth Product :
120MHz
JESD-609 Code :
e3
Published :
2006
Frequency :
120MHz
Mount :
Surface Mount
Length :
6.7mm
Weight :
7.994566mg
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
60V
Pbfree Code :
No
Power Dissipation :
3W
Transition Frequency :
120MHz
Base Part Number :
ZXTP2012
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
-5.5A
REACH SVHC :
No SVHC
Case Connection :
COLLECTOR
Height :
1.65mm
Collector Emitter Voltage (VCEO) :
60V
Terminal Form :
Gull wing
Package / Case :
TO-261-4, TO-261AA
Contact Plating :
Tin
Packaging :
Tape and Reel (TR)
Continuous Collector Current :
-5.5A
Polarity/Channel Type :
PNP
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
20nA ICBO
Transistor Element Material :
SILICON
Transistor Type :
PNP
Number of Terminations :
4
Collector Base Voltage (VCBO) :
100V
Emitter Base Voltage (VEBO) :
7V
Number of Pins :
4
Transistor Application :
SWITCHING
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Max Collector Current :
5.5A
Pin Count :
4
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 2A 1V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 500mA, 5A
Max Breakdown Voltage :
60V
Width :
3.7mm
Radiation Hardening :
No
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2012GTA from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:ZXTP2012, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Number of Pins:4, ZXTP2012GTA pinout, ZXTP2012GTA datasheet PDF, ZXTP2012GTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2012GTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTP2012GTA


PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

ZXTP2012GTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -195mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 500mA, 5A.Single BJT transistor is recommended to keep the continuous collector voltage at -5.5A in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -5.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 5.5A volts at Single BJT transistors maximum.

ZXTP2012GTA Features


the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -195mV
the vce saturation(Max) is 250mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 120MHz


ZXTP2012GTA Applications


There are a lot of Diodes Incorporated
ZXTP2012GTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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