ZXTP2012GTA
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- Mfr.Part #
- ZXTP2012GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 5.5A SOT223-3
- Stock
- 28,754
- In Stock ：
- 28,754
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 6.7mm
- Number of Terminations :
- 4
- REACH SVHC :
- No SVHC
- Pbfree Code :
- No
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- -195mV
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Max Collector Current :
- 5.5A
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Base Part Number :
- ZXTP2012
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Width :
- 3.7mm
- Current Rating :
- -5.5A
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Transition Frequency :
- 120MHz
- Height :
- 1.65mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Power Dissipation :
- 3W
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Case Connection :
- COLLECTOR
- Continuous Collector Current :
- -5.5A
- Package / Case :
- TO-261-4, TO-261AA
- Gain Bandwidth Product :
- 120MHz
- Max Power Dissipation :
- 3W
- Number of Pins :
- 4
- JESD-609 Code :
- e3
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 100V
- Voltage - Rated DC :
- -60V
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 120MHz
- Weight :
- 7.994566mg
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500mA, 5A
- Datasheets
- ZXTP2012GTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2012GTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -195mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 500mA, 5A.Single BJT transistor is recommended to keep the continuous collector voltage at -5.5A in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -5.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 5.5A volts at Single BJT transistors maximum.
ZXTP2012GTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -195mV
the vce saturation(Max) is 250mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 120MHz
ZXTP2012GTA Applications
There are a lot of Diodes Incorporated
ZXTP2012GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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