ZXTP2012ASTZ
- Mfr.Part #
- ZXTP2012ASTZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 60V 3.5A E-LINE
- Stock
- 5,596
- In Stock :
- 5,596
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 3.5A
- Transistor Type :
- PNP
- Width :
- 2.41mm
- Number of Pins :
- 3
- Height :
- 4.01mm
- Collector Emitter Voltage (VCEO) :
- 60V
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 1W
- Transistor Application :
- SWITCHING
- Length :
- 4.77mm
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Power Dissipation :
- 1W
- Mount :
- Through Hole
- Package / Case :
- E-Line-3, Formed Leads
- Pbfree Code :
- No
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 120MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 100V
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 120MHz
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -210mV
- Published :
- 2006
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Elements :
- 1
- Pin Count :
- 3
- Frequency :
- 120MHz
- hFE Min :
- 100
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- Radiation Hardening :
- No
- Datasheets
- ZXTP2012ASTZ
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PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZXTP2012ASTZ Overview
DC current gain in this device equals 100 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 210mV @ 400mA, 4A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3.5A volts.
ZXTP2012ASTZ Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
ZXTP2012ASTZ Applications
There are a lot of Diodes Incorporated
ZXTP2012ASTZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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