ZXTP2012ASTZ

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Mfr.Part #
ZXTP2012ASTZ
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3, Formed Leads
Datasheet
Download
Description
TRANS PNP 60V 3.5A E-LINE
Stock
5,596
In Stock :
5,596

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Max Breakdown Voltage :
60V
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Max Collector Current :
3.5A
Transistor Type :
PNP
Width :
2.41mm
Number of Pins :
3
Height :
4.01mm
Collector Emitter Voltage (VCEO) :
60V
REACH SVHC :
No SVHC
Max Power Dissipation :
1W
Transistor Application :
SWITCHING
Length :
4.77mm
Terminal Form :
Wire
Number of Terminations :
3
Mounting Type :
Through Hole
Power Dissipation :
1W
Mount :
Through Hole
Package / Case :
E-Line-3, Formed Leads
Pbfree Code :
No
Packaging :
Tape and Box (TB)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
120MHz
Collector Emitter Breakdown Voltage :
60V
Collector Base Voltage (VCBO) :
100V
Factory Lead Time :
8 Weeks
Peak Reflow Temperature (Cel) :
260
RoHS Status :
ROHS3 Compliant
Gain Bandwidth Product :
120MHz
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
-210mV
Published :
2006
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 1V
Emitter Base Voltage (VEBO) :
7V
Number of Elements :
1
Pin Count :
3
Frequency :
120MHz
hFE Min :
100
Polarity/Channel Type :
PNP
JESD-609 Code :
e3
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
Current - Collector Cutoff (Max) :
20nA ICBO
Vce Saturation (Max) @ Ib, Ic :
210mV @ 400mA, 4A
Radiation Hardening :
No
Datasheets
ZXTP2012ASTZ
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2012ASTZ from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:E-Line-3, Formed Leads, ZXTP2012ASTZ pinout, ZXTP2012ASTZ datasheet PDF, ZXTP2012ASTZ amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2012ASTZ ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTP2012ASTZ


PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole

ZXTP2012ASTZ Overview


DC current gain in this device equals 100 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 210mV @ 400mA, 4A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3.5A volts.

ZXTP2012ASTZ Features


the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz


ZXTP2012ASTZ Applications


There are a lot of Diodes Incorporated
ZXTP2012ASTZ applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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