ZXTP2012ASTOA
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- Mfr.Part #
- ZXTP2012ASTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 3.5A E-LINE
- Stock
- 8,000
- In Stock ：
- 8,000
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3.5A
- Transistor Type :
- PNP
- Max Frequency :
- 120MHz
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -3.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Length :
- 4.77mm
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Package / Case :
- E-Line-3
- Emitter Base Voltage (VEBO) :
- 7V
- Height :
- 4.01mm
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 100V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Base Part Number :
- ZXTP2012A
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- hFE Min :
- 100
- Published :
- 2006
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- -210mV
- Gain Bandwidth Product :
- 120MHz
- Voltage - Rated DC :
- -60V
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Width :
- 2.41mm
- Transition Frequency :
- 120MHz
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Datasheets
- ZXTP2012ASTOA
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PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Tape & Reel (TR) Through Hole
ZXTP2012ASTOA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -210mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 210mV @ 400mA, 4A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3.5A volts at Single BJT transistors maximum.
ZXTP2012ASTOA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -3.5A
a transition frequency of 120MHz
ZXTP2012ASTOA Applications
There are a lot of Diodes Incorporated
ZXTP2012ASTOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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