ZXTP2009ZTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-40V

Collector Emitter Breakdown Voltage :

40V

Element Configuration :

Single

Radiation Hardening :

No

Weight :

51.993025mg

Vce Saturation (Max) @ Ib, Ic :

185mV @ 550mA, 5.5A

Max Power Dissipation :

3W

ECCN Code :

EAR99

Number of Terminations :

4

hFE Min :

100

Max Collector Current :

5.5A

Current - Collector Cutoff (Max) :

20nA

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-243AA

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

7.5V

Terminal Finish :

Matte Tin (Sn)

Frequency :

152MHz

Published :

2006

JESD-609 Code :

e3

Base Part Number :

ZXTP2009

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

40V

Max Breakdown Voltage :

40V

Collector Base Voltage (VCBO) :

50V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Current Rating :

-5.5A

Pbfree Code :

No

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.6mm

Transition Frequency :

152MHz

Mount :

Surface Mount

Continuous Collector Current :

-5.5A

Collector Emitter Saturation Voltage :

-185mV

Lead Free :

Lead Free

Transistor Type :

PNP

Case Connection :

COLLECTOR

Factory Lead Time :

15 Weeks

Width :

2.6mm

Gain Bandwidth Product :

152MHz

Number of Pins :

4

Number of Elements :

1

Polarity/Channel Type :

PNP

Terminal Form :

Flat

Power - Max :

2.1W

Packaging :

Tape and Reel (TR)

Power Dissipation :

3W

Length :

4.6mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V