ZXTP2009ZTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

40V

Width :

2.6mm

Vce Saturation (Max) @ Ib, Ic :

185mV @ 550mA, 5.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

ZXTP2009

Voltage - Rated DC :

-40V

Collector Emitter Saturation Voltage :

-185mV

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

50V

Transition Frequency :

152MHz

Emitter Base Voltage (VEBO) :

7.5V

Lead Free :

Lead Free

Transistor Type :

PNP

Current Rating :

-5.5A

RoHS Status :

ROHS3 Compliant

Frequency :

152MHz

Power - Max :

2.1W

Gain Bandwidth Product :

152MHz

Number of Pins :

4

Continuous Collector Current :

-5.5A

Current - Collector Cutoff (Max) :

20nA

Max Power Dissipation :

3W

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Terminal Position :

Dual

Max Breakdown Voltage :

40V

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

PNP

Transistor Application :

SWITCHING

Published :

2006

JESD-609 Code :

e3

Mount :

Surface Mount

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

40V

hFE Min :

100

Pin Count :

4

Length :

4.6mm

Element Configuration :

Single

Factory Lead Time :

15 Weeks

Number of Terminations :

4

Pbfree Code :

No

ECCN Code :

EAR99

Power Dissipation :

3W

Weight :

51.993025mg

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Number of Elements :

1

Height :

1.6mm

Max Collector Current :

5.5A

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-243AA