ZXTP2009ZTA
- Mfr.Part #
- ZXTP2009ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 5.5A SOT89-3
- Stock
- 612
- In Stock :
- 612
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 152MHz
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -185mV
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Height :
- 1.6mm
- Base Part Number :
- ZXTP2009
- Weight :
- 51.993025mg
- Package / Case :
- TO-243AA
- Transistor Type :
- PNP
- Pbfree Code :
- No
- Continuous Collector Current :
- -5.5A
- Power - Max :
- 2.1W
- Current - Collector Cutoff (Max) :
- 20nA
- Mount :
- Surface Mount
- Max Power Dissipation :
- 3W
- Collector Base Voltage (VCBO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- JESD-609 Code :
- e3
- Number of Pins :
- 4
- Length :
- 4.6mm
- Vce Saturation (Max) @ Ib, Ic :
- 185mV @ 550mA, 5.5A
- hFE Min :
- 100
- Element Configuration :
- Single
- Max Collector Current :
- 5.5A
- Voltage - Rated DC :
- -40V
- Published :
- 2006
- Collector Emitter Voltage (VCEO) :
- 40V
- Polarity/Channel Type :
- PNP
- Frequency :
- 152MHz
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- Width :
- 2.6mm
- Power Dissipation :
- 3W
- Current Rating :
- -5.5A
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Dual
- Factory Lead Time :
- 15 Weeks
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 152MHz
- Emitter Base Voltage (VEBO) :
- 7.5V
- Collector Emitter Breakdown Voltage :
- 40V
- Datasheets
- ZXTP2009ZTA

PNP -55°C~150°C TJ 20nA 1 Elements 4 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP2009ZTA Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -185mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -5.5A is necessary for high efficiency.The base voltage of the emitter can be kept at 7.5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -5.5A.In this part, there is a transition frequency of 152MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 5.5A volts.
ZXTP2009ZTA Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -185mV
the vce saturation(Max) is 185mV @ 550mA, 5.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -5.5A
a transition frequency of 152MHz
ZXTP2009ZTA Applications
There are a lot of Diodes Incorporated
ZXTP2009ZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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