ZXTP19100CGTA
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- Mfr.Part #
- ZXTP19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A SOT223-3
- Stock
- 7,881
- In Stock ：
- 7,881
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Breakdown Voltage :
- 100V
- Weight :
- 7.994566mg
- Max Power Dissipation :
- 5.3W
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 295mV @ 200mA, 2A
- Emitter Base Voltage (VEBO) :
- -7V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 142MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Application :
- SWITCHING
- Height :
- 1.65mm
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 110V
- Pbfree Code :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Polarity/Channel Type :
- PNP
- Continuous Collector Current :
- -2A
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 6.7mm
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Transistor Type :
- PNP
- Width :
- 3.7mm
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Power - Max :
- 3W
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Number of Pins :
- 4
- Gain Bandwidth Product :
- 142MHz
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -130mV
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 5.3W
- Number of Terminations :
- 4
- Terminal Form :
- Gull wing
- Package / Case :
- TO-261-4, TO-261AA
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- ZXTP19100C
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Transition Frequency :
- 142MHz
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- ZXTP19100CGTA
ZXTP19100CGTA Documents
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP19100CGTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -130mV.A VCE saturation (Max) of 295mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.As you can see, the part has a transition frequency of 142MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
ZXTP19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -130mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 142MHz
ZXTP19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTP19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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