ZXTP19100CGTA
- Mfr.Part #
- ZXTP19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A SOT223-3
- Stock
- 7,881
- In Stock :
- 7,881
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 5.3W
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 5.3W
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Transition Frequency :
- 142MHz
- Collector Base Voltage (VCBO) :
- 110V
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- Emitter Base Voltage (VEBO) :
- -7V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -130mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Length :
- 6.7mm
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 295mV @ 200mA, 2A
- Collector Emitter Voltage (VCEO) :
- 100V
- Base Part Number :
- ZXTP19100C
- Mounting Type :
- Surface Mount
- Published :
- 2008
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- PNP
- Width :
- 3.7mm
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 142MHz
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- -2A
- Number of Elements :
- 1
- Height :
- 1.65mm
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Collector Current :
- 2A
- Frequency :
- 142MHz
- Number of Pins :
- 4
- Max Breakdown Voltage :
- 100V
- Power - Max :
- 3W
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- ZXTP19100CGTA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP19100CGTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -130mV.A VCE saturation (Max) of 295mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.As you can see, the part has a transition frequency of 142MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
ZXTP19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -130mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 142MHz
ZXTP19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTP19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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