ZXTP19100CGTA
- Mfr.Part #
- ZXTP19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A SOT223-3
- Stock
- 7,881
- In Stock :
- 7,881
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.65mm
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 7.994566mg
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Length :
- 6.7mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Pbfree Code :
- No
- Terminal Position :
- Dual
- Continuous Collector Current :
- -2A
- Base Part Number :
- ZXTP19100C
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 142MHz
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -7V
- Terminal Finish :
- Matte Tin (Sn)
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 100V
- Published :
- 2008
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 295mV @ 200mA, 2A
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Power Dissipation :
- 5.3W
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 142MHz
- Max Collector Current :
- 2A
- Collector Base Voltage (VCBO) :
- 110V
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 142MHz
- Transistor Application :
- SWITCHING
- Width :
- 3.7mm
- Power - Max :
- 3W
- Number of Terminations :
- 4
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -130mV
- Max Power Dissipation :
- 5.3W
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Datasheets
- ZXTP19100CGTA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP19100CGTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -130mV.A VCE saturation (Max) of 295mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.As you can see, the part has a transition frequency of 142MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
ZXTP19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -130mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 142MHz
ZXTP19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTP19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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