ZXTP19100CGTA
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- Mfr.Part #
- ZXTP19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A SOT223-3
- Stock
- 7,881
- In Stock ：
- 7,881
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 4
- Height :
- 1.65mm
- Width :
- 3.7mm
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 110V
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Emitter Base Voltage (VEBO) :
- -7V
- Terminal Finish :
- Matte Tin (Sn)
- Gain Bandwidth Product :
- 142MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Transition Frequency :
- 142MHz
- Max Power Dissipation :
- 5.3W
- Power - Max :
- 3W
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- -2A
- Vce Saturation (Max) @ Ib, Ic :
- 295mV @ 200mA, 2A
- Published :
- 2008
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Power Dissipation :
- 5.3W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Polarity/Channel Type :
- PNP
- Frequency :
- 142MHz
- Max Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 2A
- Collector Emitter Saturation Voltage :
- -130mV
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Pbfree Code :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Base Part Number :
- ZXTP19100C
- Package / Case :
- TO-261-4, TO-261AA
- Weight :
- 7.994566mg
- Terminal Position :
- Dual
- Length :
- 6.7mm
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Datasheets
- ZXTP19100CGTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP19100CGTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -130mV.A VCE saturation (Max) of 295mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.As you can see, the part has a transition frequency of 142MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
ZXTP19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -130mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 142MHz
ZXTP19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTP19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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