ZVN3320FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

1.4mm

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Height :

1.02mm

Drain to Source Breakdown Voltage :

200V

Reach Compliance Code :

Unknown

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Feedback Cap-Max (Crss) :

5 pF

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

Published :

2012

Rds On (Max) @ Id, Vgs :

25 Ω @ 100mA, 10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

JESD-609 Code :

e3

Element Configuration :

Single

Power Dissipation :

330mW

Lead Free :

Lead Free

Number of Elements :

1

Qualification Status :

Not Qualified

Mount :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

60mA

Rise Time :

7ns

Vgs(th) (Max) @ Id :

3V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

60mA Ta

Current Rating :

60mA

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Turn-Off Delay Time :

6 ns

RoHS Status :

RoHS Compliant

Turn On Delay Time :

5 ns

Voltage - Rated DC :

200V

Terminal Position :

Dual

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

0.06A

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-G3

Fall Time (Typ) :

7 ns

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

330mW Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Length :

3.04mm

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Weight :

7.994566mg