ZVN3306ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

5Ohm

Power Dissipation-Max :

625mW Ta

Mount :

Through Hole

Qualification Status :

Not Qualified

Published :

2012

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Rise Time :

7ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

6 ns

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Lead Free :

Lead Free

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Number of Terminations :

3

Terminal Form :

Wire

JESD-30 Code :

R-PSIP-W3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

625mW

Fall Time (Typ) :

7 ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

E-Line-3

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

0.27A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

35pF @ 18V

RoHS Status :

RoHS Compliant

Turn On Delay Time :

5 ns

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Terminal Finish :

MATTE TIN

Continuous Drain Current (ID) :

270mA

Current - Continuous Drain (Id) @ 25°C :

270mA Ta

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Current Rating :

270mA

Pin Count :

3

Number of Elements :

1

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Drain to Source Breakdown Voltage :

60V

Voltage - Rated DC :

60V

Weight :

453.59237mg