ZVN3310ASTZ

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Number of Channels :

1

Package / Case :

E-Line-3

Terminal Form :

Wire

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

453.59237mg

Number of Elements :

1

Pin Count :

3

Factory Lead Time :

17 Weeks

Power Dissipation :

625mW

FET Type :

N-Channel

Turn-Off Delay Time :

6 ns

Power Dissipation-Max :

625mW Ta

Turn On Delay Time :

5 ns

Height :

4.01mm

Mount :

Through Hole

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

0.2A

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Vgs (Max) :

±20V

Width :

2.41mm

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 25V

Drain to Source Breakdown Voltage :

100V

Element Configuration :

Single

Continuous Drain Current (ID) :

200mA

Published :

2012

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Pbfree Code :

yes

Rise Time :

7ns

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Fall Time (Typ) :

7 ns

Length :

4.77mm

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

10 Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Voltage - Rated DC :

100V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Current Rating :

200mA

Number of Pins :

3

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant