ZVN3310A

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Width :

2.41mm

Length :

4.77mm

Drain to Source Breakdown Voltage :

100V

Number of Terminations :

3

Terminal Form :

Wire

Pin Count :

3

Weight :

453.59237mg

Published :

2006

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

BOTTOM

REACH SVHC :

No SVHC

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Current Rating :

200mA

Packaging :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 25V

Resistance :

10Ohm

Number of Channels :

1

Lead Free :

Lead Free

Rise Time :

7ns

Rds On (Max) @ Id, Vgs :

10 Ω @ 500mA, 10V

Power Dissipation :

625mW

Vgs (Max) :

±20V

Fall Time (Typ) :

7 ns

Factory Lead Time :

17 Weeks

Drain Current-Max (Abs) (ID) :

0.2A

Peak Reflow Temperature (Cel) :

260

Feedback Cap-Max (Crss) :

5 pF

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

ECCN Code :

EAR99

Power Dissipation-Max :

625mW Ta

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.4V @ 1mA

JESD-609 Code :

e3

Threshold Voltage :

2.4V

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

6 ns

Height :

4.01mm

Voltage - Rated DC :

100V

Mount :

Through Hole

Continuous Drain Current (ID) :

200mA

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

5 ns

Element Configuration :

Single

Pbfree Code :

yes

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)