ZVN3310ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

625mW Ta

Voltage - Rated DC :

100V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Pin Count :

3

Rise Time :

7ns

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Drain to Source Breakdown Voltage :

100V

Package / Case :

E-Line-3

Turn On Delay Time :

5 ns

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Power Dissipation :

625mW

Gate to Source Voltage (Vgs) :

20V

Weight :

453.59237mg

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.2A

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Number of Terminations :

3

Continuous Drain Current (ID) :

200mA

Vgs (Max) :

±20V

Number of Elements :

1

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

10 Ω @ 500mA, 10V

Number of Channels :

1

Lead Free :

Lead Free

Terminal Form :

Wire

Element Configuration :

Single

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 25V

Turn-Off Delay Time :

6 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Fall Time (Typ) :

7 ns

JESD-30 Code :

R-PSIP-W3

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

200mA

Published :

2006

Mount :

Through Hole