ZVN3310ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

7ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

10 Ω @ 500mA, 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Terminal Finish :

MATTE TIN

Mount :

Through Hole

Voltage - Rated DC :

100V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.2A

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 25V

Current Rating :

200mA

JESD-30 Code :

R-PSIP-W3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Turn-Off Delay Time :

6 ns

Qualification Status :

Not Qualified

Lead Free :

Lead Free

JESD-609 Code :

e3

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Weight :

453.59237mg

Package / Case :

E-Line-3

Continuous Drain Current (ID) :

200mA

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Wire

FET Type :

N-Channel

Power Dissipation :

625mW

Number of Channels :

1

Turn On Delay Time :

5 ns

Power Dissipation-Max :

625mW Ta

Published :

2006

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

7 ns