ZVN3310FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

100mA Ta

Published :

2012

Mount :

Surface Mount

Voltage - Rated DC :

100V

Number of Elements :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Weight :

7.994566mg

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 25V

Power Dissipation-Max :

330mW Ta

Power Dissipation :

330mW

Height :

1.02mm

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current Rating :

200mA

Width :

1.4mm

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

5 pF

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

4 ns

Qualification Status :

Not Qualified

Fall Time (Typ) :

5 ns

Number of Terminations :

3

Turn On Delay Time :

3 ns

Length :

3.04mm

Number of Channels :

1

Lead Free :

Lead Free

Continuous Drain Current (ID) :

100mA

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10 Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

Element Configuration :

Single

Rise Time :

5ns

Peak Reflow Temperature (Cel) :

260