ZVN3306A

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.01mm

Current - Continuous Drain (Id) @ 25°C :

270mA Ta

Voltage - Rated DC :

60V

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Weight :

453.59237mg

Resistance :

5Ohm

Current Rating :

270mA

Fall Time (Typ) :

7 ns

Turn-Off Delay Time :

6 ns

Packaging :

Bulk

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

35pF @ 18V

Drain Current-Max (Abs) (ID) :

0.27A

Number of Elements :

1

Threshold Voltage :

2.4V

Pin Count :

3

Feedback Cap-Max (Crss) :

8 pF

ECCN Code :

EAR99

Width :

2.41mm

Mount :

Through Hole

Factory Lead Time :

17 Weeks

Number of Terminations :

3

Transistor Element Material :

SILICON

Terminal Form :

Wire

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

7ns

Number of Channels :

1

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Published :

2006

Continuous Drain Current (ID) :

270mA

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

60V

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Length :

4.77mm

Element Configuration :

Single

Power Dissipation-Max :

625mW Ta

Turn On Delay Time :

5 ns

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Radiation Hardening :

No

Power Dissipation :

625mW