US5U3TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

30V

FET Feature :

Schottky Diode (Isolated)

Rise Time :

9ns

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e2

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Transistor Application :

SWITCHING

Power Dissipation-Max :

1W Ta

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Radiation Hardening :

No

Lead Free :

Lead Free

Fall Time (Typ) :

6 ns

Turn On Delay Time :

7 ns

Turn-Off Delay Time :

15 ns

Nominal Vgs :

1.5 V

Terminal Finish :

TIN COPPER

Operating Temperature :

150°C TJ

Number of Elements :

1

Threshold Voltage :

1.5V

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Drain Current (ID) :

1.5A

Pin Count :

5

RoHS Status :

ROHS3 Compliant

Published :

2006

Power Dissipation :

1W

Termination :

SMD/SMT

Drain-source On Resistance-Max :

0.34Ohm

Number of Pins :

5

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.5A, 4.5V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Position :

Dual

Package / Case :

6-SMD (5 Leads), Flat Lead

REACH SVHC :

No SVHC

Number of Terminations :

5

Mounting Type :

Surface Mount

ECCN Code :

EAR99

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V