US5U3TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Terminal Finish :

TIN COPPER

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.5A, 4.5V

Peak Reflow Temperature (Cel) :

260

Dual Supply Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Power Dissipation :

1W

Termination :

SMD/SMT

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Position :

Dual

Number of Terminations :

5

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Number of Elements :

1

JESD-609 Code :

e2

Number of Pins :

5

FET Feature :

Schottky Diode (Isolated)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

15 ns

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Pbfree Code :

yes

Fall Time (Typ) :

6 ns

Radiation Hardening :

No

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Rise Time :

9ns

Drain-source On Resistance-Max :

0.34Ohm

Package / Case :

6-SMD (5 Leads), Flat Lead

Turn On Delay Time :

7 ns

Pin Count :

5

Element Configuration :

Single

Nominal Vgs :

1.5 V

REACH SVHC :

No SVHC

Threshold Voltage :

1.5V

Continuous Drain Current (ID) :

1.5A

Power Dissipation-Max :

1W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006