US5U2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Pin Count :

5

Power Dissipation-Max :

1W Ta

Number of Pins :

5

Package / Case :

6-SMD (5 Leads), Flat Lead

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 5V

JESD-609 Code :

e2

Lead Free :

Lead Free

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

FET Feature :

Schottky Diode (Isolated)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Radiation Hardening :

No

Turn On Delay Time :

6 ns

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

FET Type :

N-Channel

Rise Time :

6ns

Voltage - Rated DC :

30V

ECCN Code :

EAR99

Current Rating :

1.4A

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1.4A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Drain-source On Resistance-Max :

0.38Ohm

Terminal Finish :

Tin/Copper (Sn/Cu)

Transistor Element Material :

SILICON

Power Dissipation :

1W

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.4A, 10V

Time@Peak Reflow Temperature-Max (s) :

10

Turn-Off Delay Time :

13 ns

Mount :

Surface Mount

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

1.4A

Pbfree Code :

yes