US5U30TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Pin Count :

5

Mount :

Surface Mount

Continuous Drain Current (ID) :

1A

Fall Time (Typ) :

10 ns

Drain to Source Breakdown Voltage :

-20V

Drain-source On Resistance-Max :

0.43Ohm

Element Configuration :

Single

Transistor Application :

SWITCHING

JESD-609 Code :

e2

Operating Temperature :

150°C TJ

FET Feature :

Schottky Diode (Isolated)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

10

Power Dissipation-Max :

1W Ta

Power Dissipation :

1W

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Turn On Delay Time :

9 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain Current-Max (Abs) (ID) :

1A

Voltage - Rated DC :

-20V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin/Copper (Sn/Cu)

Vgs (Max) :

±12V

Number of Elements :

1

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

RoHS Status :

ROHS3 Compliant

Width :

1.6mm

Rds On (Max) @ Id, Vgs :

390m Ω @ 1A, 4.5V

Length :

2.9mm

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

Package / Case :

6-SMD (5 Leads), Flat Lead

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Number of Pins :

5

Current Rating :

-1A

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Height :

850μm

FET Type :

P-Channel

Radiation Hardening :

No

Rise Time :

8ns

Turn-Off Delay Time :

25 ns

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Mode :

ENHANCEMENT MODE