US5U29TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.43Ohm

Number of Elements :

1

Turn On Delay Time :

9 ns

Element Configuration :

Single

Pin Count :

5

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

390m Ω @ 1A, 4.5V

Power Dissipation :

700mW

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

1A

FET Feature :

Schottky Diode (Isolated)

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Power Dissipation-Max :

1W Ta

FET Type :

P-Channel

Rise Time :

8ns

Continuous Drain Current (ID) :

1A

Terminal Finish :

TIN COPPER

Number of Terminations :

5

Number of Pins :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Vgs(th) (Max) @ Id :

2V @ 1mA

Drain to Source Breakdown Voltage :

20V

Current Rating :

-1A

Vgs (Max) :

±12V

Package / Case :

6-SMD (5 Leads), Flat Lead

Fall Time (Typ) :

8 ns

Published :

2004

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e2

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Voltage - Rated DC :

-20V

Terminal Position :

Dual

Turn-Off Delay Time :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 5V