US5U29TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain to Source Breakdown Voltage :

20V

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

1A

Pin Count :

5

Power Dissipation :

700mW

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

5

Transistor Element Material :

SILICON

Turn On Delay Time :

9 ns

Fall Time (Typ) :

8 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

6-SMD (5 Leads), Flat Lead

JESD-609 Code :

e2

Rise Time :

8ns

ECCN Code :

EAR99

Terminal Finish :

TIN COPPER

Gate to Source Voltage (Vgs) :

12V

Lead Free :

Lead Free

Current Rating :

-1A

Operating Temperature :

150°C TJ

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Drain-source On Resistance-Max :

0.43Ohm

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

-20V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Vgs (Max) :

±12V

FET Feature :

Schottky Diode (Isolated)

Power Dissipation-Max :

1W Ta

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

5

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

1A

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

390m Ω @ 1A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 5V

Mounting Type :

Surface Mount