US5U38TR
- Mfr.Part #
- US5U38TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1A TUMT5
- Stock
- 10,291
- In Stock :
- 10,291
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 1A
- Rds On Max :
- 390 mΩ
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 25 ns
- Drain to Source Breakdown Voltage :
- 20V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Max Operating Temperature :
- 150°C
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Finish :
- TIN COPPER
- Lead Free :
- Lead Free
- JESD-609 Code :
- e2
- Fall Time (Typ) :
- 8 ns
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 700mW
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Drain to Source Voltage (Vdss) :
- 20V
- Polarity/Channel Type :
- P-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 12V
- Number of Terminations :
- 5
- Drain Current-Max (Abs) (ID) :
- 1A
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Published :
- 2008
- Terminal Position :
- Dual
- Drain to Source Resistance :
- 390mOhm
- Input Capacitance :
- 150pF
- Factory Lead Time :
- 12 Weeks
- Terminal Form :
- Flat
- Rise Time :
- 8ns
- Power Dissipation :
- 700mW
- Peak Reflow Temperature (Cel) :
- 260
- Resistance :
- 800mOhm
- Number of Pins :
- 5
- Turn On Delay Time :
- 9 ns
- Datasheets
- US5U38TR

Tape & Reel (TR) 20V
US5U38TR Overview
This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 25 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 390mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.This transistor requires a 20V drain to source voltage (Vdss).
US5U38TR Features
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 390mOhm
a 20V drain to source voltage (Vdss)
US5U38TR Applications
There are a lot of ROHM Semiconductor
US5U38TR applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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