US5U38TR

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Mfr.Part #
US5U38TR
Manufacturer
ROHM Semiconductor
Package / Case
Datasheet
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Description
MOSFET P-CH 20V 1A TUMT5
Stock
10,291
In Stock :
10,291

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Continuous Drain Current (ID) :
1A
Rds On Max :
390 mΩ
Min Operating Temperature :
-55°C
Turn-Off Delay Time :
25 ns
Drain to Source Breakdown Voltage :
20V
Transistor Application :
SWITCHING
Number of Elements :
1
Max Operating Temperature :
150°C
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Finish :
TIN COPPER
Lead Free :
Lead Free
JESD-609 Code :
e2
Fall Time (Typ) :
8 ns
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
700mW
Time@Peak Reflow Temperature-Max (s) :
10
Drain to Source Voltage (Vdss) :
20V
Polarity/Channel Type :
P-Channel
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
12V
Number of Terminations :
5
Drain Current-Max (Abs) (ID) :
1A
Radiation Hardening :
No
Mount :
Surface Mount
Published :
2008
Terminal Position :
Dual
Drain to Source Resistance :
390mOhm
Input Capacitance :
150pF
Factory Lead Time :
12 Weeks
Terminal Form :
Flat
Rise Time :
8ns
Power Dissipation :
700mW
Peak Reflow Temperature (Cel) :
260
Resistance :
800mOhm
Number of Pins :
5
Turn On Delay Time :
9 ns
Datasheets
US5U38TR
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor US5U38TR from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Number of Pins:5, US5U38TR pinout, US5U38TR datasheet PDF, US5U38TR amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor US5U38TR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor US5U38TR


Tape & Reel (TR) 20V

US5U38TR Overview


This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 25 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 390mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.This transistor requires a 20V drain to source voltage (Vdss).

US5U38TR Features


a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 390mOhm
a 20V drain to source voltage (Vdss)


US5U38TR Applications


There are a lot of ROHM Semiconductor
US5U38TR applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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