UMZ1NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current Rating :

150mA

Number of Terminations :

6

HTS Code :

8541.21.00.75

Max Collector Current :

150mA

Pbfree Code :

yes

Max Frequency :

100MHz

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

180MHz

ECCN Code :

EAR99

Continuous Collector Current :

-150mA

Terminal Form :

Gull wing

Number of Pins :

6

Emitter Base Voltage (VEBO) :

-6V

Height :

900μm

Factory Lead Time :

13 Weeks

Type :

GENERAL PURPOSE

REACH SVHC :

No SVHC

Width :

1.25mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

150mW

Frequency - Transition :

180MHz 140MHz

VCEsat-Max :

0.4 V

Gain Bandwidth Product :

180MHz

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Element Configuration :

Dual

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

60V

JESD-609 Code :

e2

Base Part Number :

*MZ1

Terminal Finish :

Tin/Copper (Sn/Cu)

Number of Elements :

2

hFE Min :

120

Transistor Type :

NPN, PNP

Pin Count :

6

Transistor Element Material :

SILICON

Published :

2000

Polarity :

PNP, NPN

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

Max Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Power Dissipation :

150mW

Length :

2mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Lead Free :

Lead Free