UMZ1N

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

Emitter Base Voltage (VEBO) :

-6V

Transition Frequency :

180MHz

Operating Temperature :

150°C TJ

Number of Elements :

2

VCEsat-Max :

0.4 V

Power Dissipation :

150mW

Published :

2000

Terminal Form :

Gull wing

Number of Terminations :

6

Transistor Element Material :

SILICON

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Max Frequency :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Length :

2mm

Polarity :

PNP, NPN

Height :

900μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Terminal Finish :

Tin/Copper (Sn/Cu)

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

13 Weeks

Base Part Number :

*MZ1

Max Power Dissipation :

150mW

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Element Configuration :

Dual

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

HTS Code :

8541.21.00.75

Max Collector Current :

150mA

Transistor Type :

NPN, PNP

Gain Bandwidth Product :

180MHz

Max Breakdown Voltage :

50V

JESD-609 Code :

e2

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Frequency - Transition :

180MHz 140MHz

Width :

1.25mm

Current Rating :

150mA

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Type :

GENERAL PURPOSE

hFE Min :

120

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

60V

Transistor Application :

AMPLIFIER

Continuous Collector Current :

-150mA