UMZ1NFHATR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Voltage - Collector Emitter Breakdown (Max) :

50V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G6

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Transistor Element Material :

SILICON

Power - Max :

150mW

Number of Terminations :

6

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN, PNP

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

150mA

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Form :

Gull wing

Configuration :

SEPARATE, 2 ELEMENTS

Terminal Position :

Dual

Number of Elements :

2

Polarity :

NPN, PNP

Series :

Automotive, AEC-Q101

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

180MHz

Frequency - Transition :

180MHz 140MHz

Factory Lead Time :

8 Weeks

Transistor Application :

AMPLIFIER

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Published :

2016

Package / Case :

6-VSSOP, SC-88, SOT-363