UMZ1NT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Base Part Number :

UMZ1N

Gain Bandwidth Product :

114MHz

Current - Collector Cutoff (Max) :

2µA

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Transition Frequency :

114MHz

Published :

2006

Max Power Dissipation :

250mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Pin Count :

6

Polarity :

PNP, NPN

Power Dissipation :

385mW

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Collector Emitter Saturation Voltage :

250mV

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Frequency - Transition :

114MHz 142MHz

Current Rating :

200mA

hFE Min :

200

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN, PNP

Max Breakdown Voltage :

50V

Max Collector Current :

200mA

Number of Pins :

6

Number of Elements :

2

Emitter Base Voltage (VEBO) :

7V

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

50V

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

60V

Frequency :

114MHz

Element Configuration :

Dual

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Voltage - Rated DC :

50V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA