TK7A90E,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

2Ohm @ 3.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Number of Channels :

1

Turn-Off Delay Time :

85 ns

Rds On Max :

2 Ω

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 700μA

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Package / Case :

TO-220-3 Full Pack

RoHS Status :

RoHS Compliant

Packaging :

Tube

Operating Temperature :

150°C TJ

Max Operating Temperature :

150°C

Fall Time (Typ) :

15 ns

Element Configuration :

Single

Weight :

6.000006g

Continuous Drain Current (ID) :

7A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2014

Vgs (Max) :

±30V

Series :

π-MOSVIII

Rise Time :

20ns

Input Capacitance :

1.35nF

Supplier Device Package :

TO-220SIS

Drain to Source Resistance :

1.6Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Turn On Delay Time :

55 ns

Power Dissipation-Max :

45W Tc

Drain to Source Voltage (Vdss) :

900V