TK7A45DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Supplier Device Package :

TO-220SIS

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Input Capacitance :

540pF

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Mounting Type :

Through Hole

Number of Pins :

3

Packaging :

Tube

Fall Time (Typ) :

8 ns

Min Operating Temperature :

-55°C

Rds On Max :

1.2 Ω

Operating Temperature :

150°C TJ

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4.4V @ 1mA

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2010

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

450V

Rise Time :

18ns

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 3.3A, 10V

Factory Lead Time :

16 Weeks

Max Operating Temperature :

150°C

Mount :

Through Hole

Power Dissipation-Max :

35W Tc

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Continuous Drain Current (ID) :

6.5A

Series :

π-MOSVII