TK7A55D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Power Dissipation-Max :

35W Tc

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

7A

Vgs (Max) :

±30V

Supplier Device Package :

TO-220SIS

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Min Operating Temperature :

-55°C

Mounting Type :

Through Hole

Max Operating Temperature :

150°C

Fall Time (Typ) :

11 ns

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Series :

π-MOSVII

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Rise Time :

20ns

Drain to Source Voltage (Vdss) :

550V

Rds On (Max) @ Id, Vgs :

1.25Ohm @ 3.5A, 10V

Rds On Max :

1.25 Ω

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Published :

1998

Input Capacitance :

700pF