TK7A80W,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Drain to Source Voltage (Vdss) :

800 V

FET Feature :

-

Rds On (Max) @ Id, Vgs :

950mOhm @ 3.3A, 10V

Mounting Type :

Through Hole

Transistor Polarity :

N-Channel

Operating Temperature :

150°C

Rise Time :

18 ns

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On, Min Rds On) :

10V

Number of Channels :

1 Channel

Brand :

Toshiba

Mounting Style :

Through Hole

Packaging :

Tube

Manufacturer :

Toshiba

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Product Category :

MOSFET

Product Type :

MOSFET

Series :

DTMOSIV

Tradename :

DTMOSIV

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 10 V

Power Dissipation (Max) :

35W (Tc)

Maximum Operating Temperature :

+ 150 C

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

700 pF @ 300 V

Vgs (Max) :

±20V

Supplier Device Package :

TO-220SIS

Channel Mode :

Enhancement

RoHS :

Details

Current - Continuous Drain (Id) @ 25°C :

6.5A (Ta)

Product Status :

Active

Subcategory :

MOSFETs

Vgs(th) (Max) @ Id :

4V @ 280μA