TK7A50D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Rise Time :

18ns

Drain to Source Breakdown Voltage :

500V

Factory Lead Time :

16 Weeks

Mount :

Through Hole

Continuous Drain Current (ID) :

7A

Fall Time (Typ) :

8 ns

Rds On (Max) @ Id, Vgs :

1.22 Ω @ 3.5A, 10V

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Power Dissipation :

35W

Number of Pins :

3

Power Dissipation-Max :

35W Tc

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Mounting Type :

Through Hole

Turn-Off Delay Time :

55 ns

RoHS Status :

RoHS Compliant

Operating Temperature :

150°C TJ

Packaging :

Tube

Series :

π-MOSVII

FET Type :

N-Channel