TK7A50D(STA4,Q,M)
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- Mfr.Part #
- TK7A50D(STA4,Q,M)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 7A TO220SIS
- Stock
- 35
- In Stock ：
- 35
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Power Dissipation :
- 35W
- Series :
- π-MOSVII
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 25V
- Rise Time :
- 18ns
- Factory Lead Time :
- 16 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 55 ns
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4.4V @ 1mA
- Continuous Drain Current (ID) :
- 7A
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation-Max :
- 35W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Published :
- 2010
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 1.22 Ω @ 3.5A, 10V
- Fall Time (Typ) :
- 8 ns
- Number of Pins :
- 3
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- RoHS Compliant
- Datasheets
- TK7A50D(STA4,Q,M)
N-Channel Tube 1.22 Ω @ 3.5A, 10V ±30V 600pF @ 25V 12nC @ 10V TO-220-3 Full Pack
TK7A50D(STA4,Q,M) Overview
A device's maximal input capacitance is 600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 55 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
TK7A50D(STA4,Q,M) Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
TK7A50D(STA4,Q,M) Applications
There are a lot of Toshiba Semiconductor and Storage
TK7A50D(STA4,Q,M) applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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