TK7A60W,S4VX

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

600V

Turn-Off Delay Time :

55 ns

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

30V

Min Operating Temperature :

-55°C

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600V

Mount :

Through Hole

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

FET Feature :

Super Junction

Power Dissipation :

30W

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Operating Temperature :

150°C TJ

Drain to Source Resistance :

500MOhm

Vgs (Max) :

±30V

Rds On Max :

600 mΩ

Series :

DTMOSIV

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Continuous Drain Current (ID) :

7A

Input Capacitance :

490pF

Rise Time :

18ns

Supplier Device Package :

TO-220SIS

Vgs(th) (Max) @ Id :

3.7V @ 350μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Capacitance :

490pF

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 300V

Rds On (Max) @ Id, Vgs :

600mOhm @ 3.5A, 10V

Fall Time (Typ) :

7 ns

RoHS Status :

RoHS Compliant

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

30W Tc