TK7A65D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 1mA

Power Dissipation :

45W

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Series :

π-MOSVII

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Input Capacitance :

1.2nF

Fall Time (Typ) :

12 ns

Packaging :

Tube

Mount :

Through Hole

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

25ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

650V

Number of Elements :

1

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Power Dissipation-Max :

45W Tc

Radiation Hardening :

No

Number of Pins :

3

Supplier Device Package :

TO-220SIS

Continuous Drain Current (ID) :

7A

Published :

2011

Rds On (Max) @ Id, Vgs :

980mOhm @ 3.5A, 10V

RoHS Status :

RoHS Compliant

Package / Case :

TO-220-3 Full Pack

Rds On Max :

980 mΩ