TK6A80E,S4X
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- Mfr.Part #
- TK6A80E,S4X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 6A TO220SIS
- Stock
- 11,586
- In Stock ：
- 11,586
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 45W Tc
- Series :
- π-MOSVIII
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Weight :
- 6.000006g
- Continuous Drain Current (ID) :
- 6A
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 25V
- Turn-Off Delay Time :
- 85 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2014
- Fall Time (Typ) :
- 15 ns
- Operating Temperature :
- 150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Mount :
- Through Hole
- Packaging :
- Tube
- Element Configuration :
- Single
- Number of Channels :
- 1
- Rise Time :
- 20ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 600μA
- Turn On Delay Time :
- 55 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta
- Rds On (Max) @ Id, Vgs :
- 1.7 Ω @ 3A, 10V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-220-3 Full Pack
- Drain to Source Voltage (Vdss) :
- 800V
- Datasheets
- TK6A80E,S4X
N-Channel Tube 1.7 Ω @ 3A, 10V ±30V 1350pF @ 25V 32nC @ 10V 800V TO-220-3 Full Pack
TK6A80E,S4X Overview
A device's maximal input capacitance is 1350pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 85 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 55 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
TK6A80E,S4X Features
a continuous drain current (ID) of 6A
the turn-off delay time is 85 ns
a 800V drain to source voltage (Vdss)
TK6A80E,S4X Applications
There are a lot of Toshiba Semiconductor and Storage
TK6A80E,S4X applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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