TK6A60W,S4VX

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 300V

Mount :

Through Hole

Vgs (Max) :

±30V

Capacitance :

390pF

Drain to Source Breakdown Voltage :

600V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

18ns

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

6.2A

Vgs(th) (Max) @ Id :

3.7V @ 310μA

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

Power Dissipation-Max :

30W Tc

Rds On (Max) @ Id, Vgs :

750m Ω @ 3.1A, 10V

FET Type :

N-Channel

Element Configuration :

Single

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

55 ns

Series :

DTMOSIV

Package / Case :

TO-220-3 Full Pack

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Published :

2014

FET Feature :

Super Junction

Mounting Type :

Through Hole

Fall Time (Typ) :

7 ns

Power Dissipation :

30W