TK6A60W,S4VX
- Mfr.Part #
- TK6A60W,S4VX
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.2A TO220SIS
- Stock
- 3,296
- In Stock :
- 3,296
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 18ns
- Power Dissipation :
- 30W
- Vgs(th) (Max) @ Id :
- 3.7V @ 310μA
- Drain to Source Breakdown Voltage :
- 600V
- Turn-Off Delay Time :
- 55 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A Ta
- Package / Case :
- TO-220-3 Full Pack
- Published :
- 2014
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Fall Time (Typ) :
- 7 ns
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 6.2A
- FET Feature :
- Super Junction
- Power Dissipation-Max :
- 30W Tc
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Series :
- DTMOSIV
- Operating Temperature :
- 150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 390pF @ 300V
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Factory Lead Time :
- 16 Weeks
- Gate to Source Voltage (Vgs) :
- 30V
- Capacitance :
- 390pF
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 3.1A, 10V
- Datasheets
- TK6A60W,S4VX

N-Channel Tube 750m Ω @ 3.1A, 10V ±30V 390pF @ 300V 12nC @ 10V TO-220-3 Full Pack
TK6A60W,S4VX Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 390pF @ 300V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.2A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
TK6A60W,S4VX Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
TK6A60W,S4VX Applications
There are a lot of Toshiba Semiconductor and Storage
TK6A60W,S4VX applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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