TK6A60D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

FET Type :

N-Channel

Operating Temperature :

150°C TJ

RoHS Status :

RoHS Compliant

Case Connection :

Isolated

Drain Current-Max (Abs) (ID) :

6A

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Mounting Type :

Through Hole

Number of Terminations :

3

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Series :

π-MOSVII

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 1mA

Factory Lead Time :

16 Weeks

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

24A

Radiation Hardening :

No

Continuous Drain Current (ID) :

6A

Terminal Position :

Single

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2011

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

40W Tc

Fall Time (Typ) :

12 ns

Rds On (Max) @ Id, Vgs :

1.25 Ω @ 3A, 10V

Rise Time :

20ns