TK6A45DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Fall Time (Typ) :

8 ns

Number of Pins :

3

Radiation Hardening :

No

Rise Time :

18ns

Continuous Drain Current (ID) :

5.5A

Max Operating Temperature :

150°C

Mount :

Through Hole

Input Capacitance :

490pF

Mounting Type :

Through Hole

Rds On Max :

1.35 Ω

Packaging :

Tube

Max Power Dissipation :

35W

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Series :

π-MOSVII

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

1.35Ohm @ 2.8A, 10V

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

450V

Min Operating Temperature :

-55°C

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-220SIS

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

RoHS Status :

RoHS Compliant

Vgs (Max) :

±30V