TK6A65D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

6A

Mounting Type :

Through Hole

FET Type :

N-Channel

Input Capacitance :

1.05nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 1mA

Power Dissipation-Max :

45W Tc

Supplier Device Package :

TO-220SIS

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Fall Time (Typ) :

10 ns

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Series :

π-MOSVII

Vgs (Max) :

±30V

Operating Temperature :

150°C TJ

Rds On Max :

1.11 Ω

Drain to Source Voltage (Vdss) :

650V

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.11Ohm @ 3A, 10V

Published :

2010

Rise Time :

25ns

Max Operating Temperature :

150°C

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

16 Weeks

Package / Case :

TO-220-3 Full Pack

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V