TK6A55DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Operating Temperature :

150°C TJ

Published :

2013

Power Dissipation-Max :

35W Tc

Number of Pins :

3

Mount :

Through Hole

Fall Time (Typ) :

8 ns

Series :

π-MOSVII

Packaging :

Tube

Rds On Max :

1.48 Ω

Rise Time :

18ns

Continuous Drain Current (ID) :

5.5A

Input Capacitance :

600pF

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Radiation Hardening :

No

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

550V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Max Operating Temperature :

150°C

FET Type :

N-Channel

Supplier Device Package :

TO-220SIS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

1.48Ohm @ 2.8A, 10V

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta