TK6A55DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Number of Pins :

3

Published :

2013

Rds On (Max) @ Id, Vgs :

1.48Ohm @ 2.8A, 10V

RoHS Status :

RoHS Compliant

Rds On Max :

1.48 Ω

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Continuous Drain Current (ID) :

5.5A

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

30V

Rise Time :

18ns

Package / Case :

TO-220-3 Full Pack

Min Operating Temperature :

-55°C

Series :

π-MOSVII

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Mount :

Through Hole

Radiation Hardening :

No

Vgs (Max) :

±30V

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

550V

Supplier Device Package :

TO-220SIS

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Operating Temperature :

150°C TJ

Input Capacitance :

600pF

Power Dissipation-Max :

35W Tc

Factory Lead Time :

16 Weeks