TK4A80E,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 N-Channel

Supplier Device Package :

TO-220SIS

RoHS :

Details

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

800 V

Channel Mode :

Enhancement

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Packaging :

Tube

Mounting Style :

Through Hole

Power Dissipation (Max) :

35W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Operating Temperature :

150°C

Configuration :

Single

FET Feature :

-

Minimum Operating Temperature :

- 55 C

Subcategory :

MOSFETs

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.5Ohm @ 2A, 10V

Package / Case :

TO-220-3 Full Pack

Tradename :

MOSVIII

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

650 pF @ 25 V

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Brand :

Toshiba

Vgs(th) (Max) @ Id :

4V @ 400μA

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Maximum Operating Temperature :

+ 150 C

Manufacturer :

Toshiba

Series :

-

Product Status :

Active

Package :

Tube

Rise Time :

25 ns