TK4A50D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Rise Time :

15ns

Series :

π-MOSVII

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2Ohm @ 2A, 10V

Number of Pins :

3

Mount :

Through Hole

Factory Lead Time :

24 Weeks

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

4A

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Mounting Type :

Through Hole

Power Dissipation-Max :

30W Tc

Packaging :

Tube

Rds On Max :

2 Ω

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

7 ns

Vgs (Max) :

±30V

Radiation Hardening :

No

Published :

2009

Drain to Source Voltage (Vdss) :

500V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Input Capacitance :

380pF

Supplier Device Package :

TO-220SIS

Max Operating Temperature :

150°C

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

150°C TJ

RoHS Status :

RoHS Compliant