TK4A55DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Series :

π-MOSVII

Rds On Max :

2.45 Ω

Radiation Hardening :

No

Power Dissipation-Max :

30W Tc

Rise Time :

15ns

Published :

2009

Input Capacitance :

380pF

Max Operating Temperature :

150°C

Supplier Device Package :

TO-220SIS

Drain to Source Voltage (Vdss) :

550V

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3 Full Pack

Min Operating Temperature :

-55°C

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.45Ohm @ 1.8A, 10V

Continuous Drain Current (ID) :

3.5A

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Fall Time (Typ) :

7 ns

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Vgs (Max) :

±30V