TK4A60DB(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

3.7A

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Power Dissipation-Max :

35W Tc

Mount :

Through Hole

Published :

2010

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.9A, 10V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Fall Time (Typ) :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Factory Lead Time :

16 Weeks

Package / Case :

TO-220-3 Full Pack

Series :

π-MOSVII

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Rise Time :

18ns

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)