TK4A60DB(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

Rise Time :

18ns

Continuous Drain Current (ID) :

3.7A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

FET Type :

N-Channel

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Mounting Type :

Through Hole

Published :

2010

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.9A, 10V

Fall Time (Typ) :

8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

π-MOSVII

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Mount :

Through Hole

Vgs (Max) :

±30V

Power Dissipation-Max :

35W Tc