TK4A65DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

600pF

Rds On (Max) @ Id, Vgs :

1.9Ohm @ 1.8A, 10V

FET Type :

N-Channel

Power Dissipation-Max :

35W Tc

Max Operating Temperature :

150°C

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Min Operating Temperature :

-55°C

Packaging :

Tube

Mounting Type :

Through Hole

Factory Lead Time :

16 Weeks

Number of Pins :

3

Vgs (Max) :

±30V

Rds On Max :

1.9 Ω

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Series :

π-MOSVII

Mount :

Through Hole

Published :

2010

Drain to Source Voltage (Vdss) :

650V

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Continuous Drain Current (ID) :

3.5A

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3 Full Pack

Fall Time (Typ) :

8 ns

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Rise Time :

18ns

Supplier Device Package :

TO-220SIS