TK4A60D(STA4,Q,M)

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Mfr.Part #
TK4A60D(STA4,Q,M)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 4A TO220SIS
Stock
8,253
In Stock :
8,253

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
600pF @ 25V
Published :
2009
Power Dissipation-Max :
35W Tc
Current - Continuous Drain (Id) @ 25°C :
4A Ta
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Rise Time :
18ns
Radiation Hardening :
No
Rds On (Max) @ Id, Vgs :
1.7 Ω @ 2A, 10V
Gate to Source Voltage (Vgs) :
30V
Number of Pins :
3
Vgs(th) (Max) @ Id :
4.4V @ 1mA
Fall Time (Typ) :
8 ns
Mounting Type :
Through Hole
Series :
π-MOSVII
Continuous Drain Current (ID) :
4A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Through Hole
FET Type :
N-Channel
Package / Case :
TO-220-3 Full Pack
Drain to Source Voltage (Vdss) :
600V
Operating Temperature :
150°C TJ
RoHS Status :
RoHS Compliant
Packaging :
Tube
Factory Lead Time :
12 Weeks
Datasheets
TK4A60D(STA4,Q,M)
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK4A60D(STA4,Q,M) from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Operating Temperature:150°C TJ, TK4A60D(STA4,Q,M) pinout, TK4A60D(STA4,Q,M) datasheet PDF, TK4A60D(STA4,Q,M) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK4A60D(STA4,Q,M) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK4A60D(STA4,Q,M)


N-Channel Tube 1.7 Ω @ 2A, 10V ±30V 600pF @ 25V 12nC @ 10V 600V TO-220-3 Full Pack

TK4A60D(STA4,Q,M) Overview


A device's maximal input capacitance is 600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

TK4A60D(STA4,Q,M) Features


a continuous drain current (ID) of 4A
a 600V drain to source voltage (Vdss)


TK4A60D(STA4,Q,M) Applications


There are a lot of Toshiba Semiconductor and Storage
TK4A60D(STA4,Q,M) applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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