TK4A53D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Continuous Drain Current (ID) :

4A

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

1.7Ohm @ 2A, 10V

Supplier Device Package :

TO-220SIS

Radiation Hardening :

No

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Published :

2009

Mount :

Through Hole

FET Type :

N-Channel

Fall Time (Typ) :

8 ns

Factory Lead Time :

24 Weeks

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Vgs (Max) :

±30V

Min Operating Temperature :

-55°C

Package / Case :

TO-220-3 Full Pack

Series :

π-MOSVII

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Rise Time :

18ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Input Capacitance :

490pF

Rds On Max :

1.7 Ω

Power Dissipation-Max :

35W Tc

Drain to Source Voltage (Vdss) :

525V

Max Operating Temperature :

150°C

Number of Pins :

3

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V