TK20S06K3L(T6L1,NQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

29 mΩ

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

780pF

Operating Temperature :

175°C TJ

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

6 ns

Rise Time :

16ns

Turn On Delay Time :

8 ns

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

29mOhm @ 10A, 10V

Drain to Source Voltage (Vdss) :

60V

Vgs(th) (Max) @ Id :

3V @ 1mA

Number of Pins :

3

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Published :

2009

Supplier Device Package :

DPAK+

Max Operating Temperature :

175°C

Series :

U-MOSIV

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

20A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Mounting Type :

Surface Mount

Power Dissipation-Max :

38W Tc

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 10V

Fall Time (Typ) :

24 ns

Gate to Source Voltage (Vgs) :

20V