TK20A60U(Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

40ns

Continuous Drain Current (ID) :

20A

Gate to Source Voltage (Vgs) :

30V

Series :

DTMOSII

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Published :

2009

Rds On (Max) @ Id, Vgs :

190mOhm @ 10A, 10V

Mount :

Through Hole

Power Dissipation :

45W

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-220-3 Full Pack

Rds On Max :

190 mΩ

Element Configuration :

Single

Operating Temperature :

150°C TJ

Factory Lead Time :

52 Weeks

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Number of Pins :

3

Vgs (Max) :

±30V

Fall Time (Typ) :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 10V

Radiation Hardening :

No

Power Dissipation-Max :

45W Tc

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Mounting Type :

Through Hole

Number of Elements :

1

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Drain to Source Resistance :

190mOhm

Input Capacitance :

1.47nF

Vgs(th) (Max) @ Id :

5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-220SIS