TK20P04M1,RQ(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

29mOhm @ 10A, 10V

Fall Time (Typ) :

5.1 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Published :

2008

Mount :

Surface Mount, Through Hole

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

985pF @ 10V

Vgs(th) (Max) @ Id :

2.3V @ 100μA

Series :

U-MOSVI-H

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Input Capacitance :

985pF

Operating Temperature :

150°C TJ

Rise Time :

2.7ns

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Supplier Device Package :

DPAK

Power Dissipation-Max :

27W Tc

Continuous Drain Current (ID) :

20A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Drain to Source Voltage (Vdss) :

40V

Rds On Max :

29 mΩ

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant