TK20C60W,S1VQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Supplier Device Package :

I2PAK

Vgs(th) (Max) @ Id :

3.7V @ 1mA

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

600V

Max Operating Temperature :

150°C

Mount :

Through Hole

Element Configuration :

Single

Turn On Delay Time :

50 ns

Turn-Off Delay Time :

100 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

155 mΩ

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Operating Temperature :

150°C TJ

Rise Time :

25ns

Power Dissipation-Max :

165W Tc

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Drain to Source Voltage (Vdss) :

600V

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

155mOhm @ 10A, 10V

Series :

DTMOSIV

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Input Capacitance :

1.68nF

Radiation Hardening :

No

Vgs (Max) :

±30V

Drain to Source Resistance :

130mOhm

Continuous Drain Current (ID) :

20A

Mounting Type :

Through Hole

Fall Time (Typ) :

6 ns

Weight :

2.387001g

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 300V

Number of Pins :

3